lienPicogiga pumps up HEMTs
In work conducted with TriQuint Semiconductor's R&D group, Picogiga has helped develop what it calls the world's most powerful silicon-based aluminum–gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors (HEMTs). The supplier, a division of the Soitec Group, used its proprietary molecular-beam epitaxy process to grow the compounds, then provided the structures to TriQuint. Using AlGaN/GaN heterostructures and 0.3-µm-length gates to fabricate the devices on Picogiga's silicon-based GaN epi material, the chipmaker's research facility reported the industry's highest power density to date. The silicon-based transistor-continuous wave reached an output power density of 7 W/mm at 10 GHz without external device cooling.
"Thanks to improved material growth by Picogiga and TriQuint's optimized process, we achieved high breakdown voltages and good isolation for these devices," notes Deep Dumka, senior research engineer at the chipmaker. This "allowed us to operate them at a 40-V drain bias.... This suggests that GaN-on-silicon has evolved to a level that makes it attractive for implementation in medium- to high-power transistors." Picogiga introduced its new suite of advanced AlGaN/GaN epi layers on silicon in early 2004 and offers the product in 2-, 3-, and 4-in.-diam substrates.
(merci P4)
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